npn silicon planar medium power darlington transistors issue 2 ? june 94 features * 160 volt v ceo * 1 amp continuous current * gain of 5k at i c =1 amp *p tot = 1 watt absolute maximum ratings. parameter symbol ztx600 ztx601 unit collector-base voltage v cbo 160 180 v collector-emitter voltage v ceo 140 160 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx600 ztx601 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo 160 180 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 140 160 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 10 v i e =100 m a collector cut-off current i cbo 0.01 10 0.01 10 m a m a m a m a v cb =140v v cb =160v v cb =140v, t a =100c v cb =160v, t a =100c emitter cut-off current i ebo 0.1 0.1 m a v eb =8v colllector-emitter cut-off current i ces 10 10 m a m a v ces =140v v ces =160v collector-emitter saturation voltage v ce(sat) 0.75 0.85 1.1 1.2 0.75 0.85 1.1 1.2 v v i c =0.5a, i b =5ma* i c =1a, i b =10ma* base-emitter saturation voltage v be(sat) 1.7 1.9 1.7 1.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 1.5 1.7 1.5 1.7 v ic=1a, v ce =5v* e-line to92 compatible ztx600 ztx601 3-206 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx600 ztx601 unit conditions. min. typ. max. min. typ. max. static forward current transfer ratio group a group b h fe 1k 2k 1k 100k 1k 2k 1k 100k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* 1k 2k 1k 2k 5k 3k 20k 1k 2k 1k 2k 5k 3k 20k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* 5k 10k 5k 10k 20k 10k 100k 5k 10k 5k 10k 20k 10k 100k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* transition frequency f t 150 250 150 250 mhz i c =100ma, v ce =10v f=20mhz input capacitance c ibo 60 90 60 90 pf v eb =0.5v, f=1mhz output capacitance c obo 10 15 10 15 pf v ce =10v, f=1mhz switching times t on 0.75 0.75 m s i c =0.5a, v ce =10v i b1 =i b2 =0.5ma t off 2.2 2.2 m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% the maximum permissible operational temperature can be obtained from this graph using the following equation t amb ( max ) = power ( max ) - power ( act ) 0.0057 + 25 c t amb(max ) = maximum operating ambient temperature power(max) = maximum power dissipation figure, obtained from the above graph for a given v ce and source resistance (r s ) power(actual)= actual power dissipation in users circuit c b e ztx600 ztx601 voltage derating graph v ce - collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0 0.2 r s = 5k w 1 10 100 dc conditions r s = 50k w r s = maximum power dissipation (w) 200 r s = 1m w 3-207
npn silicon planar medium power darlington transistors issue 2 ? june 94 features * 160 volt v ceo * 1 amp continuous current * gain of 5k at i c =1 amp *p tot = 1 watt absolute maximum ratings. parameter symbol ztx600 ztx601 unit collector-base voltage v cbo 160 180 v collector-emitter voltage v ceo 140 160 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx600 ztx601 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo 160 180 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 140 160 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 10 v i e =100 m a collector cut-off current i cbo 0.01 10 0.01 10 m a m a m a m a v cb =140v v cb =160v v cb =140v, t a =100c v cb =160v, t a =100c emitter cut-off current i ebo 0.1 0.1 m a v eb =8v colllector-emitter cut-off current i ces 10 10 m a m a v ces =140v v ces =160v collector-emitter saturation voltage v ce(sat) 0.75 0.85 1.1 1.2 0.75 0.85 1.1 1.2 v v i c =0.5a, i b =5ma* i c =1a, i b =10ma* base-emitter saturation voltage v be(sat) 1.7 1.9 1.7 1.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 1.5 1.7 1.5 1.7 v ic=1a, v ce =5v* e-line to92 compatible ztx600 ztx601 3-206 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx600 ztx601 unit conditions. min. typ. max. min. typ. max. static forward current transfer ratio group a group b h fe 1k 2k 1k 100k 1k 2k 1k 100k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* 1k 2k 1k 2k 5k 3k 20k 1k 2k 1k 2k 5k 3k 20k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* 5k 10k 5k 10k 20k 10k 100k 5k 10k 5k 10k 20k 10k 100k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* transition frequency f t 150 250 150 250 mhz i c =100ma, v ce =10v f=20mhz input capacitance c ibo 60 90 60 90 pf v eb =0.5v, f=1mhz output capacitance c obo 10 15 10 15 pf v ce =10v, f=1mhz switching times t on 0.75 0.75 m s i c =0.5a, v ce =10v i b1 =i b2 =0.5ma t off 2.2 2.2 m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% the maximum permissible operational temperature can be obtained from this graph using the following equation t amb ( max ) = power ( max ) - power ( act ) 0.0057 + 25 c t amb(max ) = maximum operating ambient temperature power(max) = maximum power dissipation figure, obtained from the above graph for a given v ce and source resistance (r s ) power(actual)= actual power dissipation in users circuit c b e ztx600 ztx601 voltage derating graph v ce - collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0 0.2 r s = 5k w 1 10 100 dc conditions r s = 50k w r s = maximum power dissipation (w) 200 r s = 1m w 3-207
typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) i c - co l le c to r cur r e nt ( am ps) v ce - collector voltage (volts) safe operating area 1 1000 10 100 0.01 0.1 1 10 single pulse test at t amb =25c 0 0.60 0.01 0.1 10 1 0.70 0.80 0.90 1.00 i c - collector current (amps) v be(sat) v i c v b e (sat) - ( v olts) 1.0 0.01 10 0.1 1 1.2 1.4 1.6 1.8 i c /i b =100 i c /i b =100 i c - collector current (amps) h fe v i c h f e - gain 0.001 0.01 10 0.1 1 4k 8k 12k 16k 20k v ce =10v group a group b i c - collector current (amps) v be(on) v i c v b e - (v olts) 1.2 1.3 1.4 1.5 0.01 0.1 110 1.1 v ce =5v d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 zt x 60 0 zt x 6 0 1 ztx600 ztx601 3-208
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